Cambridge GaN Devices
CGD has been created to explore and develop a number of unique opportunities in power electronics made possible by the team’s proprietary application of Gallium Nitride to the silicon-based semiconductor transistor manufacturing process. With silicon transistors widely acknowledged as having attained maximum efficiency, CGD’s power design engineers have developed a range of Gallium Nitride transistors that are over 100 times faster, lose 5 – 10 times less power and are 4 times smaller than existing silicon equivalents. The possibilities and range of potential applications for these transistors is almost endless in this increasingly digitally connected world.
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