CGD has been created to explore and develop a number of unique opportunities in power electronics made possible by the team’s proprietary application of Gallium Nitride to the silicon-based semiconductor transistor manufacturing process. With silicon transistors widely acknowledged as having attained maximum efficiency, CGD’s power design engineers have developed a range of Gallium Nitride transistors that are over 100 times faster, lose 5 – 10 times less power and are 4 times smaller than existing silicon equivalents. The possibilities and range of potential applications for these transistors is almost endless in this increasingly digitally connected world.
Sí: Cambridge GaN Devices tiene ahora mismo 7 vacantes abiertas en JobsRadar, repartidas en 4 departamentos y 3 ubicaciones. 3 de ellas se abrieron en los últimos 30 días. Última actualización el 8 de septiembre de 2026 a las 10:19 UTC.