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Über diese Sr. Tech Lead SRAM ROM Expert Stelle bei NXP Semiconductors

NXP Semiconductors · Vor Ort · Bangalore

Job Responsibilities:

  • Define and drive next-generation SRAM and ROM architectures for embedded and standalone memory products.
  • Own memory roadmap development, architectural trade-off analysis, and technology strategy across multiple product lines.
  • Lead optimization of performance, power, area (PPA), yield, and reliability targets.
  • Architect memory arrays, peripheral circuits, redundancy schemes, ECC, power-management features, and test methodologies.
  • Collaborate with circuit design, layout, verification, product, and process technology teams from concept through silicon validation and production.
  • Drive innovation in low-voltage operation, high-speed access, low-power techniques, and memory reliability.
  • Develop architectural models for memory performance, power consumption, area, and yield prediction.
  • Lead root-cause analysis of silicon issues and define architectural improvements for future generations.
  • Mentor engineers and provide technical leadership across cross-functional teams.
  • Influence long-term memory technology roadmaps and IP strategy.

Special Plus – In-Memory Computing (IMC)

  • Architect SRAM/ROM-based In-Memory Computing (IMC) solutions for AI/ML acceleration and edge-computing applications.
  • Evaluate and develop digital, analog, and mixed-signal IMC architectures.
  • Define compute-enabled memory macros supporting Vector-Matrix Multiplication (VMM) and Multiply-Accumulate (MAC) operations.
  • Optimize energy efficiency, throughput, accuracy, and scalability for memory-centric AI workloads.
  • Drive innovations involving ADC/DAC integration, quantization, calibration, and variation-tolerant compute architectures.
  • Collaborate with AI accelerator, system architecture, and algorithm teams to enable next-generation intelligent computing solutions.

Education

  • Bachelor’s Degree (B.E./B.Tech.) in Electrical Engineering, Electronics Engineering, Electronics & Communication Engineering, or a closely related discipline.
  • Master’s Degree (M.Tech./M.S.) in VLSI Design, Microelectronics, Semiconductor Technology, Integrated Circuit Design, or related specialization preferred.
  • Ph.D. in VLSI, Memory Design, Computer Engineering, or related field is a plus.

Experience & Skills

  • 10+ years of experience in SRAM, ROM, embedded memory, custom memory, or memory compiler development.
  • Deep expertise in memory architecture, bitcell and peripheral circuit design, redundancy, ECC, memory compilers, and advanced CMOS technologies.
  • Strong understanding of memory characterization, silicon validation, reliability, and yield optimization.
  • Proven track record of technical leadership, innovation, patent generation, and successful silicon delivery.
  • Experience in AI hardware, In-Memory Computing (IMC), or memory-centric computing architectures is highly desirable.

 


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Thank you for your interest in supporting our recruitment efforts. Please note that NXP operates under a strict Preferred Supplier List (PSL) for all recruitment activities. Any candidate profiles or resume submitted without a prior written agreement or explicit request from our Talent Acquisition team will be considered unsolicited. Such submissions will be deemed free of any obligations, and no fees will be paid by NXP or any of its affiliates, subsidiaries, or divisions - regardless of whether the candidate is hired, either coincidentally or otherwise. Thank you for your understanding.

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