Job description:

• A PhD degree in applied physics, materials science, electrical engineering, with a thesis related to the semiconductor (or adjacent industries)
• 3+ years of industrial experience in semiconductor R&D field
• In depth understanding of electrical properties of semiconductors, metals and dielectrics as well as key device building blocks (MIMCAP, MOSCAP, MOSFET)
• Demonstrated understanding of memory applications, operation, integration, challenges (DRAM, NAND)
• Demonstrated in depth understanding of semiconductor physics.
• Proven ability to interpret and cross-correlate electrical and physical characterization data.
• Prior experience with thin film deposition techniques (e.g., ALD, CVD) and their characterization methods (e.g., XPS, AFM, XRD, XRF, electrical characterization and ellipsometry)
• A curious mindset, able to synthesize the complex and drive pragmatic solutions forward
• Serve as the bridge between materials/analytical groups and device/integration teams, turning disparate datasets into a coherent physical picture.
• Ability to plan, execute and communicate projects from beginning to end and across stakeholders
• The passion and drive to take charge of your career, grabbing professional and personal development opportunities with both hands.

Core Function

• Build root-cause understanding by correlating electrical device behavior with physical/compositional analysis (TEM, XPS, XRD, SIMS, EELS, etc.).
• Interpret electrical signatures (CET/EOT, Vfb/Vt shifts, leakage, trapping, reliability trends) in terms of underlying materials properties — interface chemistry, defect density, crystallinity, layer intermixing, and stack integration effects.
• Translate combined physical–electrical insight into clear guidance for materials selection, process tuning, and integration decisions across DRAM and NAND technologies.
• Familiarity with new memory architectures such as 3D DRAM and 4F2 DRAM technologies.